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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Program charge effect on random telegraph noise amplitude and its device structural dependence in SONOS flash memory

โœ Scribed by Chiu, J.P.; Chou, Y.L.; Ma, H.C.; Tahui Wang, ; Ku, S.H.; Zou, N.K.; Chen, Vincent; Lu, W.P.; Chen, K.C.; Chih-Yuan Lu,


Book ID
120298113
Publisher
IEEE
Year
2009
Weight
384 KB
Category
Article
ISBN
1424456398

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