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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

✍ Scribed by Cheng, K.; Khakifirooz, A.; Kulkarni, P.; Ponoth, S.; Kuss, J.; Shahrjerdi, D.; Edge, L. F.; Kimball, A.; Kanakasabapathy, S.; Xiu, K.; Schmitz, S.; Reznicek, A.; Adam, T.; He, H.; Loubet, N.; Holmes, S.; Mehta, S.; Yang, D.; Upham, A.; Seo, S.-C.; Herman, J. L.; Johnson, R.; Zhu, Y.; Jamison, P.; Haran, B. S.; Zhu, Z.; Vanamurth, L. H.; Fan, S.; Horak, D.; Bu, H.; Oldiges, P. J.; Sadana, D. K.; Kozlowski, P.; McHerron, D.; O'Neill, J.; Doris, B.

Book ID: 118181577
Publisher: IEEE
Year: 2009
Tongue: English
Weight: 1012 KB
Volume: 0
Category: Article
ISBN: 1424456398
DOI: 10.1109/iedm.2009.5424422

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