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[IEEE 2009 10th International Conference on Ultimate Integration on Silicon (ULIS - Aachen, Germany (2009.03.18-2009.03.20)] 2009 10th International Conference on Ultimate Integration of Silicon - Mobility extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness

✍ Scribed by Schmidt, M.; Lemme, M.C.; Gottlob, H.D.B.; Kurz, H.; Driussi, F.; Selmi, L.

Book ID: 126724112
Publisher: IEEE
Year: 2009
Weight: 1001 KB
Category: Article
ISBN: 1424437040
DOI: 10.1109/ULIS.2009.4897531

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