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[IEEE 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) - Hakone-Machi, Kanagawa (2008.09.9-2008.09.11)] 2008 International Conference on Simulation of Semiconductor Processes and Devices - Mobility enhancement in thin silicon films: Strain and thickness dependences of the effective masses and non-parabolicity parameter

✍ Scribed by Sverdlov, Viktor; Windbacher, Thomas; Selberherr, Siegfried

Book ID: 127319626
Publisher: IEEE
Year: 2008
Weight: 816 KB
Category: Article
ISBN: 1424417538
DOI: 10.1109/sispad.2008.4648258

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