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[IEEE 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) - Hakone-Machi, Kanagawa (2008.09.9-2008.09.11)] 2008 International Conference on Simulation of Semiconductor Processes and Devices - A self-consistent calculation of band structure in silicon nanowires using a tight-binding model

✍ Scribed by Sarrazin, E.; Barraud, S.; Triozon, F.; Bournel, A.

Book ID: 126522060
Publisher: IEEE
Year: 2008
Weight: 618 KB
Category: Article
ISBN: 1424417538
DOI: 10.1109/SISPAD.2008.4648309

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