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[IEEE 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) - Hakone-Machi, Kanagawa (2008.09.9-2008.09.11)] 2008 International Conference on Simulation of Semiconductor Processes and Devices - A robust parallel delaunay mesh generation approach suitable for three-dimensional TCAD

✍ Scribed by Stimpfl, Franz; Heinzl, Rene; Schwaha, Philipp; Selberherr, Siegfried

Book ID: 120538091
Publisher: IEEE
Year: 2008
Weight: 968 KB
Category: Article
ISBN: 1424417538
DOI: 10.1109/SISPAD.2008.4648288

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