[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Two-dimensional analytical sub-threshold modeling and simulation of Gate Material Engineered HEMT for enhanced carrier transport Efficiency

[IEEE 2007 International Semiconductor D

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[IEEE 2007 International Semiconductor D

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[IEEE 2007 International Semiconductor D

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