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[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Thermal stability of 5 nm barrier InAlN/GaN HEMTs

✍ Scribed by Medjdoub, F.; Alomari, M.; Carlin, J.-F.; Gonschorek, M.; Carlin, J.-F.; Feltin, E.; Py, M. A.; Grandjean, N.; Kohn, E.

Book ID: 120825521
Publisher: IEEE
Year: 2007
Weight: 270 KB
Category: Article
ISBN: 1424418925
DOI: 10.1109/ISDRS.2007.4422392

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