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[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Normally-off AlGaN/GaN HEMTs with InGaN cap layer: A theoretical study

✍ Scribed by Vitanov, S.; Palankovski, V.

Book ID: 118167837
Publisher: IEEE
Year: 2007
Weight: 122 KB
Volume: 0
Category: Article
ISBN: 1424418925
DOI: 10.1109/isdrs.2007.4422390

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