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[IEEE 2007 65th Annual Device Research Conference - South Bend, IN, USA (2007.06.18-2007.06.20)] 2007 65th Annual Device Research Conference - Drain-to-Gate Field Engineering for Improved Frequency Response of GaN-based HEMTs

✍ Scribed by Pala, N.; Yang, Z.; Koudymov, A.; Hu, X.; Deng, J.; Gaska, R.; Simin, G.; Shur, M. S.

No coin nor oath required. For personal study only.

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