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[IEEE 2007 65th Annual Device Research Conference - South Bend, IN, USA (2007.06.18-2007.06.20)] 2007 65th Annual Device Research Conference - AlGaN/GaNHEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE

✍ Scribed by Pei, Y.; Suh, C.; Chu, R.; Recht, F.; Shen, L.; Corrion, A.; Poblenz, C.; Speck, J.; Mishra, U.K.

No coin nor oath required. For personal study only.

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