[IEEE 2006 IEEE International Reliability Physics Symposium Proceedings - San Jose, CA, USA (2006.03.26-2006.03.30)] 2006 IEEE International Reliability Physics Symposium Proceedings - Intrinsic Threshold Voltage Instability of the HFO2 NMOS Transistors

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✍ Hsu, Tai-ran 📂 Article 📅 2006 🏛 IEEE ⚖ 209 KB

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✍ Lee, Jong; Lee, Se; Chae, Heesoon; Choi, Byung; Sung, Suk-kang; Kim, Seok; Cho, 📂 Article 📅 2006 🏛 IEEE ⚖ 558 KB

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✍ Kraft, Jochen; Loffler, Bernhard; Ribic, Nikolaus; Wachmann, Ewald 📂 Article 📅 2006 🏛 IEEE 🌐 English ⚖ 250 KB

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✍ Seifert, N.; Slankard, P.; Kirsch, M.; Narasimham, B.; Zia, V.; Brookreson, C.; 📂 Article 📅 2006 🏛 IEEE ⚖ 307 KB

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✍ Puchner, H.; Kapre, R.; Sharifzadeh, S.; Majjiga, J.; Chao, R.; Radaelli, D.; Wo 📂 Article 📅 2006 🏛 IEEE ⚖ 218 KB

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✍ Tazzoli, A.; Peretti, V.; Gaddi, R.; Gnudi, A.; Zanoni, E.; Meneghesso, G. 📂 Article 📅 2006 🏛 IEEE 🌐 English ⚖ 381 KB