[IEEE 2006 European Solid-State Device Research Conference - Montreux, Switzerland (2006.09.19-2006.09.21)] 2006 European Solid-State Device Research Conference - Co-integration of 2 mV/dec Subthreshold Slope Impact Ionization MOS (I-MOS) with CMOS

[IEEE 2006 European Solid-State Device R

✍ Leman, O.; Chaehoi, A.; Mailly, F.; Latorre, L.; Nouet, P. 📂 Article 📅 2006 🏛 IEEE ⚖ 512 KB

[IEEE 2006 European Solid-State Device R

✍ Roy, A.; Chauhan, Y.; Sallese, J.-m.; Enz, C.; Ionescu, A.; Declercq, M. 📂 Article 📅 2006 🏛 IEEE ⚖ 533 KB

[IEEE 2006 European Solid-State Device R

✍ Furnemont, A.; Rosmeulen, M.; Houdt, J.; Meyer, K.; Maes, H. 📂 Article 📅 2006 🏛 IEEE ⚖ 139 KB

[IEEE 2006 European Solid-State Device R

✍ Defay, Emmanuel; Wolozan, David; Garrec, Pierre; Andre, Bernard; Ulmer, Laurent; 📂 Article 📅 2006 🏛 IEEE ⚖ 665 KB

[IEEE 2006 European Solid-State Device R

✍ Bethoux, J.-m.; Happy, H.; Dambrine, G.; Borghetti, J.; Derycke, V.; Goffman, M. 📂 Article 📅 2006 🏛 IEEE ⚖ 777 KB

[IEEE 2006 European Solid-State Device R

✍ Agaiby, Rimoon; O'Neill, Anthony; Olsen, Sarah; Eneman, Geert; Verheyen, Peter; 📂 Article 📅 2006 🏛 IEEE ⚖ 585 KB