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[IEEE 2006 European Solid-State Device Research Conference - Montreux, Switzerland (2006.09.19-2006.09.21)] 2006 European Solid-State Device Research Conference - Experimental Evidence for Reduction of Gate Tunneling Current in FinFET Structures and Its Dependence on the Fin Width

โœ Scribed by Rudenko, Tamara; Nazarov, Alexey; Kilchytska, Valeria; Flandre, Denis; Collaert, Nadine; Jurczak, Malgorzata


Book ID
121399281
Publisher
IEEE
Year
2006
Weight
465 KB
Category
Article
ISBN-13
9781424403011

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