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[IEEE 2006 European Solid-State Device Research Conference - Montreux, Switzerland (2006.09.19-2006.09.21)] 2006 European Solid-State Device Research Conference - Double Gate Tunnel FET with ultrathin silicon body and high-k gate dielectric

✍ Scribed by Boucart, Kathy; Ionescu, Adrian

No coin nor oath required. For personal study only.

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