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[IEEE 2006 European Solid-State Device Research Conference - Montreux, Switzerland (2006.09.19-2006.09.21)] 2006 European Solid-State Device Research Conference - Non-Linear Gate Length Dependence of On-Current in Si-Nanowire FETs

✍ Scribed by Weber, W.; Graham, A.; Duesberg, G.; Liebau, M.; Cheze, C.; Geelhaar, L.; Unger, E.; Pamler, W.; Hoenlein, W.; Riechert, H.; Kreupl, F.; Lugli, P.

Book ID: 120611929
Publisher: IEEE
Year: 2006
Weight: 684 KB
Category: Article
ISBN-13: 9781424403011
DOI: 10.1109/ESSDER.2006.307728

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