✦ LIBER ✦

[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - Characterization of Post-Gate Annealing Impact on Traps in AlGaN/GaN Schottky Diodes by Capacitance and Conductance Dispersion

✍ Scribed by Junghui Song, ; Hyeongnam Kim, ; Wu Lu,

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2005 International Semiconductor D

✍ Anantram, M.P.; Svizhenko, A.; Mehrez, H. 📂 Article 📅 2005 🏛 IEEE ⚖ 384 KB

[IEEE 2005 International Semiconductor D

✍ Faraclas, E.W.; Webster, R.T.; Anwar, A.F.M. 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 332 KB

[IEEE 2005 International Semiconductor D

✍ Gila, B.P.; Thaler, G.T.; Onstine, A.H.; Hlad, M.; Gerger, A.; Herrero, A.; Allu 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 144 KB

[IEEE 2005 International Semiconductor D

✍ Nagumo, T.; Hiramoto, T. 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 255 KB

[IEEE 2005 International Semiconductor D

✍ Akturk, A.; Goldsman, N.; Dhar, N.; Wijewarnasuriya, P.S. 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 201 KB

[IEEE 2005 International Semiconductor D

✍ Woochul Jeon, ; Melngailis, J. 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 234 KB