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[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks

✍ Scribed by Triplett, G.; May, G.; Brown, A.

Book ID: 126676023
Publisher: IEEE
Year: 2001
Weight: 240 KB
Category: Article
ISBN-13: 9780780374324
DOI: 10.1109/ISDRS.2001.984491

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