𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - III-V nitride-based two terminal devices for high power, high-frequency applications

✍ Scribed by Pavlidis, D.

Book ID: 120969346
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 342 KB
Category: Article
ISBN-13: 9780780374324
DOI: 10.1109/ISDRS.2001.984523

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2001 International Semiconductor D

[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - MEMS-based gray-scale lithography

✍ Waits, C.M.; Ghodssi, R.; Ervin, M.H.; Dubey, M. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 446 KB

[IEEE 2001 International Semiconductor D

[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - SiC bipolar transistors for RF applications

✍ Perez-Wurfl, I.; Krutsinger, R.; Torvik, J.T.; Van Zeghbroeck, B. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 228 KB

[IEEE 2001 International Semiconductor D

[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - Processing techniques for vertical interconnects

✍ Burkett, S.; Temple, D.; Stoner, B.; Craigie, C.; Qiao, X.; McGuire, G. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 249 KB

[IEEE 2001 International Semiconductor D

[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - Radiation effects in SOI isolation oxides

✍ Lawrence, R.K. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 334 KB

[IEEE 2001 International Semiconductor D

[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - A novel high power bipolar transistor in 4H-SiC

✍ Zhao, J.H.; Li, X.; Fursin, L.; Alexandrov, P.; Pan, M.; Weiner, M.; Burke, T.; 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 256 KB

[IEEE 2001 International Semiconductor D

[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - 4H-SiC BJT and Darlington switch for power inverter applications

✍ Li, X.; Luo, Y.; Fursin, L.; Zhao, J.H.; Pan, M.; Alexandrov, P.; Weiner, M. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 284 KB