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[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - A novel high power bipolar transistor in 4H-SiC

✍ Scribed by Zhao, J.H.; Li, X.; Fursin, L.; Alexandrov, P.; Pan, M.; Weiner, M.; Burke, T.; Khalil, G.

Book ID: 126921644
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 256 KB
Category: Article
ISBN-13: 9780780374324
DOI: 10.1109/isdrs.2001.984483

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