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[IEEE 2001 IEEE International Integrated Reliability Workshop. Final Report - Lake Tahoe, CA, USA (15-18 Oct. 2001)] 2001 IEEE International Integrated Reliability Workshop. Final Report (Cat. No.01TH8580) - Contribution of gate induced drain leakage to overall leakage and yield loss in digital submicron VLSI circuits

✍ Scribed by Semenov, O.; Pradzynski, A.; Sachdev, M.

Book ID: 126023428
Publisher: Ieee
Year: 2001
Weight: 558 KB
Edition: 2001
Category: Article
ISBN-13: 9780780371675
DOI: 10.1109/.2001.993916

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