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[IEEE 2000 International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA (6-8 Sept. 2000)] 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) - Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxides

✍ Scribed by Asenov, A.; Kaya, S.

Book ID: 126904180
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 521 KB
Edition: 1st
Category: Article
ISBN-13: 9780780362796
DOI: 10.1109/sispad.2000.871226

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