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[IEEE 2000 International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA (6-8 Sept. 2000)] 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) - Modeling line edge roughness effects in sub 100 nanometer gate length devices

✍ Scribed by Oldiges, P.; Qimghuamg Lin, ; Petrillo, K.; Sanchez, M.; Ieong, M.; Hargrove, M.

Book ID: 115531364
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 405 KB
Edition: 1st
Volume: 0
Category: Article
ISBN-13: 9780780362796
DOI: 10.1109/sispad.2000.871225

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