𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE 2000 International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA (6-8 Sept. 2000)] 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) - Essential physics of carrier transport in nanoscale MOSFETs

✍ Scribed by Lundstrom, M.; Zhibin Ren, ; Datta, S.

Book ID: 120622498
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 597 KB
Edition: 1st
Category: Article
ISBN-13: 9780780362796
DOI: 10.1109/SISPAD.2000.871193

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2000 International Conference on S

[IEEE 2000 International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA (6-8 Sept. 2000)] 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) - Direct solution of the Boltzmann transport equation in nanoscale Si devices

✍ Banoo, K.; Lundstrom, M.; Smith, R.K. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 331 KB

[IEEE 2000 International Conference on S

[IEEE 2000 International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA (6-8 Sept. 2000)] 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) - Efficient Monte Carlo device simulation with automatic error control

✍ Bufler, F.M.; Schenk, A.; Fichtner, W. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 292 KB

[IEEE 2000 International Conference on S

[IEEE 2000 International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA (6-8 Sept. 2000)] 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) - Nonlinear discretization scheme for the density-gradient equations

✍ Ancona, M.G.; Biegel, B.A. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 340 KB

[IEEE 2000 International Conference on S

[IEEE 2000 International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA (6-8 Sept. 2000)] 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) - Modeling line edge roughness effects in sub 100 nanometer gate length devices

✍ Oldiges, P.; Qimghuamg Lin, ; Petrillo, K.; Sanchez, M.; Ieong, M.; Hargrove, M. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 405 KB

[IEEE 2000 International Conference on S

[IEEE 2000 International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA (6-8 Sept. 2000)] 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) - A physics-based empirical pseudopotential model for calculating band structures of simple and complex semiconductors

✍ Pennington, G.; Goldsman, N.; McGarrity, J.M.; Crowne, F. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 371 KB

[IEEE 2000 International Conference on S

[IEEE 2000 International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA (6-8 Sept. 2000)] 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) - 2-D quantum transport device modeling by self-consistent solution of the Wigner and Poisson equations

✍ Zhiyi Han, ; Goldsman, N.; Chung-Kai Lin, 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 378 KB