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[IEEE 2000 22nd International Conference on Microelectronics. Proceedings - Nis, Yugoslavia (14-17 May 2000)] 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) - Evaluation of electron pressure effect in low-field drain region of submicron GaAs MESFET using ensemble Monte Carlo simulation

✍ Scribed by Yamada, Y.; Hasegawa, M.

Book ID: 118016000
Publisher: IEEE
Year: 1999
Weight: 297 KB
Volume: 1
Category: Article
ISBN-13: 9780780352353
DOI: 10.1109/icmel.2000.840542

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