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[IEEE [1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) - Nara, Japan (May 14-15, 1993)] [Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) - Consistent Quantitative Models For The Coupled Diffusion Of Dopants And Point Defects In Silicon

✍ Scribed by Dunham, S.T.

Book ID: 126676918
Publisher: IEEE
Year: 1993
Weight: 347 KB
Category: Article
ISBN-13: 9780780313385
DOI: 10.1109/VPAD.1993.724717

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