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[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - Investigation on the short-circuit capability of 1200 V trench gate field-stop IGBTs

✍ Scribed by Otsuki, M.; Onozawa, Y.; Kirisawa, M.; Kanemaru, H.; Yoshihara, K.; Seki, Y.

Book ID: 120075354
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 333 KB
Category: Article
ISBN-13: 9780780373181
DOI: 10.1109/ISPSD.2002.1016226

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