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ICB deposition and epitaxial growth of GaAs thin films

โœ Scribed by M. Shinohara; F. Ohtani; O. Ishiyama; M. Asari; J. Saraie


Book ID
113285060
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
421 KB
Volume
99
Category
Article
ISSN
0168-583X

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A new theoretical model for prediction of the mechanism of growth of thm epitaxial films is developed. The model is not based on the classical nucleation theory as this is the case of the approach of B~WI to the problem. The thermodynamic conditions for occurrence of island growth, layer-by-layer gr