Epitaxial growth of thin films of V2VI3s
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B. Gardes; J. Ameziane; G. Brun; J. C. Tedenac; A. Boyer
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Article
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1994
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Springer
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English
โ 267 KB
Epitaxial growth conditions of V2Vl 3 semiconductors have been studied using the molecular beam epitaxy technique, which was applied to the growth of SbzTe3 on Bi2Te 3 substrates. These substrates were prepared by gradient freeze method in a Bridgman apparatus. Ingots were cleaved along the (0001) p