I2L speed improvement by an ion implantation modification to a standard bipolar process

✍ Scribed by J.P. Pieters; A.G.K. Lutsch; H.F. le Roux

• Book ID: 104157092
• Publisher: Elsevier Science
• Year: 1983
• Tongue: English
• Weight: 356 KB
• Volume: 14
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(83)80220-1

✦ Synopsis

A techniqueis described of the modification of a standardbipolarprocess by the addition of a single ion implantationstep with one extra photo mask to give a relatively high speed-power productand a high yield ofanalogcompatible 1 2 l circuits. The method is flexible in thatthe 1 2 l device characteristicsare determined mainly by the ion implantationparameters,andthe rest of the bipolarprocess can be tailoredfor analogdevice requirements.Experimental

results are presented which show an 1 2 l f3up of 6 per collector for the npn transistorsand a speed-power product of 0.5 pJ for a fan-outof 4.