I2L speed improvement by an ion implantation modification to a standard bipolar process : J. P. Pieters, A. G. K. Lutsch and H. F. Le Roux. Microelectron. J.14 (2), 27 (1983)

I2L speed improvement by an ion implanta

I2L speed improvement by an ion implantation modification to a standard bipolar process

✍ J.P. Pieters; A.G.K. Lutsch; H.F. le Roux 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 356 KB

## A techniqueis described of the modification of a standardbipolarprocess by the addition of a single ion implantationstep with one extra photo mask to give a relatively high speed-power productand a high yield ofanalogcompatible 1 2 l circuits. The method is flexible in thatthe 1 2 l device charac