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Analysis for the reliability of the intrinsic base ion implantation of a 3 Ghz I2L bipolar process from the measure of integrated resistances: From the results, setting of rules for an expert system

✍ Scribed by J.-L. Loheac; F. Raoult; O. Bonnaud; M. Taurin


Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
391 KB
Volume
37
Category
Article
ISSN
0026-2714

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