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Hysteresis of tunnel current inw-GaN/AlGaN(0001) double-barrier structures

✍ Scribed by A. N. Razzhuvalov; S. N. Grinyaev

Book ID
111444038
Publisher
Springer
Year
2008
Tongue
English
Weight
237 KB
Volume
42
Category
Article
ISSN
1063-7826

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## Abstract Resonant tunnelling diodes of cubic Al(Ga)N/GaN were grown by plasma assisted molecular beam epitaxy on 3C‐SiC (001). We observe a pronounced negative differential resistance at about 1.2 V with a peak‐to‐valley ratio (PVR) of 1.3 to 2.7 at room temperature. Experimental data is in good