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Hyperthermal (30–500 eV) C+ ion-beam doping into GaAs during molecular beam epitaxy

✍ Scribed by T. Iida; Y. Makita; S. Kimura; Y. Kawasumi; A. Yamada; T. Tsukamoto; S. Uekusa; K. Matsuda

No coin nor oath required. For personal study only.

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