Hydrogenic impurity states in zinc-blende InGaN quantum dot
โ Scribed by Fengchun Jiang; Congxin Xia; Shuyi Wei
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 164 KB
- Volume
- 403
- Category
- Article
- ISSN
- 0921-4526
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๐ SIMILAR VOLUMES
Within the framework of effective-mass approximation, we have calculated the binding energy of a hydrogenic donor impurity in a zinc-blende (ZB) GaN/AlGaN cylindrical quantum dot (QD) using a variational procedure. It is found that the donor binding energy is highly dependent on the impurity positio
Binding energies of ground and a few low lying excited states of a hydrogenic donor confined in a zincblende GaN/AlGaN quantum well are investigated. They are computed within the framework of single band effective mass approximation, by means of a variational approach. The donor states are investiga