Electronic states of a hydrogenic impurity in a zinc-blende GaN/AlGaN quantum well

✍ Scribed by M. Pattammal; A. John Peter

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 502 KB
• Volume: 256
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2010.04.084

✦ Synopsis

Binding energies of ground and a few low lying excited states of a hydrogenic donor confined in a zincblende GaN/AlGaN quantum well are investigated. They are computed within the framework of single band effective mass approximation, by means of a variational approach. The donor states are investigated with the various impurity positions as a function of well width. The calculations have been carried out with the inclusion of conduction band non-parabolicity through the energy dependent effective mass. The variational solutions have been improved by using a two-parametric trial wavefunction. The results seem better and good agreement with the other investigators. To support our results, we observe that the values of variational parameters are consistent when two parameter wave function is used. We find that the inclusion of non-parabolic effects leads to more binding for all the values of well width and is significant for narrow wells. The results are compared with the existing available literature.