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Hydrogenic impurity in zinc-blende GaN/AlGaN quantum dot

โœ Scribed by Congxin Xia; Fengchun Jiang; Shuyi Wei; Xu Zhao


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
142 KB
Volume
38
Category
Article
ISSN
0026-2692

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โœฆ Synopsis


Within the framework of effective-mass approximation, we have calculated the binding energy of a hydrogenic donor impurity in a zinc-blende (ZB) GaN/AlGaN cylindrical quantum dot (QD) using a variational procedure. It is found that the donor binding energy is highly dependent on the impurity position and QD size. The donor binding energy E b is largest when the impurity is located at the center of the QD. The donor binding energy is decreased when the QD height (radius) is increased.


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