Hydrogenic impurity in zinc-blende GaN/AlGaN quantum dot
โ Scribed by Congxin Xia; Fengchun Jiang; Shuyi Wei; Xu Zhao
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 142 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0026-2692
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โฆ Synopsis
Within the framework of effective-mass approximation, we have calculated the binding energy of a hydrogenic donor impurity in a zinc-blende (ZB) GaN/AlGaN cylindrical quantum dot (QD) using a variational procedure. It is found that the donor binding energy is highly dependent on the impurity position and QD size. The donor binding energy E b is largest when the impurity is located at the center of the QD. The donor binding energy is decreased when the QD height (radius) is increased.
๐ SIMILAR VOLUMES
Binding energies of ground and a few low lying excited states of a hydrogenic donor confined in a zincblende GaN/AlGaN quantum well are investigated. They are computed within the framework of single band effective mass approximation, by means of a variational approach. The donor states are investiga
Based on the effective-mass approximation, the effects of the electric field and hydrostatic pressure on exciton states in a cylindrical zinc-blende (ZB) GaN/AlGaN quantum dot (QD) are investigated variationally. Numerical results show that the electric field leads to a remarkable reduction of the g