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Hydrogen-related defects in single crystalline CVD homoepitaxial diamond film studied by EPR

✍ Scribed by Mizuochi, N.; Watanabe, H.; Isoya, J.; Okushi, H.; Yamasaki, S.

Book ID: 123231438
Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 88 KB
Volume: 13
Category: Article
ISSN: 0925-9635
DOI: 10.1016/j.diamond.2003.11.028

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## Abstract This document shows that new electrically active defects can develop in the homoepitaxial layer grown on Ib diamond substrates, related to the increase of the dislocation density. Deep centres, which are able to compensate the boron acceptors, specially when the growth process allows bo