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EPR study of hydrogen-related defects in boron-doped p-type CVD homoepitaxial diamond films

✍ Scribed by Mizuochi, N.; Ogura, M.; Watanabe, H.; Isoya, J.; Okushi, H.; Yamasaki, S.

Book ID: 120980082
Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 133 KB
Volume: 13
Category: Article
ISSN: 0925-9635
DOI: 10.1016/j.diamond.2004.06.019

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## Abstract This document shows that new electrically active defects can develop in the homoepitaxial layer grown on Ib diamond substrates, related to the increase of the dislocation density. Deep centres, which are able to compensate the boron acceptors, specially when the growth process allows bo