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Hydrogen passivation effect in nitrogen-doped ZnO thin films

✍ Scribed by Li, Xiaonan; Keyes, Brian; Asher, Sally; Zhang, S. B.; Wei, Su-Huai; Coutts, Timothy J.; Limpijumnong, Sukit; Van de Walle, Chris G.

Book ID: 119965593
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 404 KB
Volume: 86
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1886256

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## Abstract N‐doped ZnO (ZnO:N) thin films were prepared by atmospheric pressure mist chemical vapor deposition. The as‐grown ZnO:N film was of high resistivity with ambiguous carrier type, while the annealed sample showed p‐type conductivity with a resistivity of 22.3 Ω cm and hole concentration o