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Hydrogen-assisted nitrogen-acceptor doping in ZnO

✍ Scribed by Lu, J. G. ;Fujita, S.

Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
148 KB
Volume
205
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

N‐doped ZnO (ZnO:N) thin films were prepared by atmospheric pressure mist chemical vapor deposition. The as‐grown ZnO:N film was of high resistivity with ambiguous carrier type, while the annealed sample showed p‐type conductivity with a resistivity of 22.3 Ω cm and hole concentration of 5.49 × 10^17^ cm^–3^. The crystallinity of ZnO films was improved by the annealing treatment. Unintentionally H impurities introduced into the as‐grown film could be annealed out and a near‐edge absorption related to the N states in band gap was present in the annealed sample, which was indicative of the appearance of activated N in ZnO during the annealing process. A hydrogen‐assisted nitrogen‐acceptor doping mechanism was proposed to explain the observation of p‐type ZnO. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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