## Abstract N‐doped ZnO (ZnO:N) thin films were prepared by atmospheric pressure mist chemical vapor deposition. The as‐grown ZnO:N film was of high resistivity with ambiguous carrier type, while the annealed sample showed p‐type conductivity with a resistivity of 22.3 Ω cm and hole concentration o
Nitrogen doping in bulk and epitaxial ZnO
✍ Scribed by A. Zeuner; H. Alves; J. Sann; W. Kriegseis; C. Neumann; D. M. Hofmann; B. K. Meyer; A. Hoffmann; U. Haboeck; M. Straßburg; A. Kaschner
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 268 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1862-6351
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract Room‐temperature (RT) ferromagnetism (FM) has been observed in Fe‐doped ZnO bulk samples fabricated by a coprecipitation method, and the effect of additional Cu doping on magnetic properties of the samples has been investigated. The results of XRD show that all doping samples are single
## Abstract Investigations of photoelectrical properties of ZnO films are important scientific task for designing UV detectors for various applications. We report the positive role of nitrogen doping in increasing photoresponsivity of ZnO:N‐based detectors. It is suggested that nitrogen slightly de