✦ LIBER ✦

Acceptor doping in ZnO with group-I elements

✍ Scribed by Joachim Sann; Albrecht Hofstaetter; Daniel Pfisterer; Jan Stehr; Bruno K. Meyer

Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 144 KB
Volume: 3
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200564635

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✦ Synopsis

Abstract

We study the interaction of hydrogen donors and Lithium acceptors in bulk ZnO by electron paramagnetic resonance and photoluminescence. With increasing diffusion temperature the number of hydrogen donors increases whereas the number of deep Li acceptors decreases. In the temperature range between 450 and 600 °C a shallow Li related acceptor is formed. The very same defect is found in Li diffused ZnO, and in epitaxial ZnO thin films by in‐situ doping with Li. We suggest a tentative model for the shallow Li acceptor whereby hydrogen would be an essential part of the defect core. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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