Acceptor state formation in arsenic-doped ZnO films grown using ozone

✍ Scribed by Erie, J. M. ;Ivill, M. ;Kim, H. S. ;Pearton, S. J. ;Gila, B. ;Ren, F. ;Norton, D. P.

• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 271 KB
• Volume: 205
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200723663

✦ Synopsis

Abstract

The optical and transport properties of As‐doped ZnO films are examined. The films are grown by pulsed‐laser deposition using As~2~O~3~ as the source of As and O~3~/O~2~ as the oxidant. The films are epitaxial, single phase, and oriented in the ZnO [002] direction. Low temperature photoluminescence spectra at 20 K show for the formation of acceptor states associated with the As, although Hall measurements indicate that the films doped with 0.2 at% As are n‐type. From the photoluminescence spectra, the binding energy of the As‐related acceptor was estimated to be 155 meV. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)