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Hydrogen induced voids in hydrogenated amorphous silicon carbon (a-SiC:H): Results of effusion and diffusion studies

✍ Scribed by Rosari Saleh; Lusitra Munisa; Wolfhard Beyer


Book ID
108060136
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
674 KB
Volume
253
Category
Article
ISSN
0169-4332

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A number of alkylsilanes and alkylcarbosilanes of widely different molecular structure are characterized in terms of their ability to form amorphous hydrogenated silicon-carbon (a-Si:C:H) films in atomic hydrogen-induced chemical vapor deposition (AHCVD). The compounds containing only Si-C and C-H b