Mechanism of the Initiation Step in Atomic Hydrogen-Induced CVD of Amorphous Hydrogenated Silicon–Carbon Films from Single-Source Precursors
✍ Scribed by Aleksander M. Wróbel; Agnieszka Walkiewicz-Pietrzykowska
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 387 KB
- Volume
- 4
- Category
- Article
- ISSN
- 0948-1907
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✦ Synopsis
A number of alkylsilanes and alkylcarbosilanes of widely different molecular structure are characterized in terms of their ability to form amorphous hydrogenated silicon-carbon (a-Si:C:H) films in atomic hydrogen-induced chemical vapor deposition (AHCVD). The compounds containing only Si-C and C-H bonds in the molecular skeleton appear to be inactive, while those with Si-Si or Si-H bonds are capable of a-Si:C:H film formation. The reactivity of the latter group of compounds is characterized by determining the AHCVD's rate constants. For most of the investigated source compounds AHCVD was found to be a non-thermally activated process. Based upon the values of the rate constant and the identified low-molecularweight and oligomeric products of AHCVD, a mechanism of the initiation step, as well as the nature of resulting film-forming precursor are proposed.