Hydrogen-Induced Resistive Switching in TiN/ALD /PEALD TiN RRAM Device

✍ Scribed by Yang Yin Chen; Goux, L.; Swerts, J.; Toeller, M.; Adelmann, C.; Kittl, J.; Jurczak, M.; Groeseneken, G.; Wouters, D.J.

• Book ID: 114572664
• Publisher: IEEE
• Year: 2012
• Tongue: English
• Weight: 369 KB
• Volume: 33
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/led.2012.2185212