Hf Cap Thickness Dependence in Bipolar-Switching TiN\HfO2\Hf\TiN RRAM Device

✍ Scribed by Chen, Y. Y.; Pourtois, G.; Clima, S.; Goux, L.; Govoreanu, B.; Fantini, A.; Degreave, R.; Kar, G. S.; Groeseneken, G.; Wouters, D. J.; Jurczak, M.

• Book ID: 121811836
• Publisher: The Electrochemical Society
• Year: 2013
• Tongue: English
• Weight: 302 KB
• Volume: 50
• Category: Article
• ISSN: 1938-6737
• DOI: 10.1149/05034.0003ecst