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[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering

✍ Scribed by Goux, L.; Fantini, A.; Kar, G.; Chen, Y.-Y.; Jossart, N.; Degraeve, R.; Clima, S.; Govoreanu, B.; Lorenzo, G.; Pourtois, G.; Wouters, D.J.; Kittl, J.A.; Altimime, L.; Jurczak, M.


Book ID
121811784
Publisher
IEEE
Year
2012
Weight
787 KB
Category
Article
ISBN
1467308455

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