Hydrogen, fluorine ion implantation effects on polycrystalline silicon grain boundaries

✍ Scribed by Akihisa Yoshida; Masatoshi Kitagawa; Fumiyo Tojo; Nobutaka Egashira; Keisuke Nakagawa; Tomio Izumi; Takashi Hirao

• Book ID: 103966028
• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 310 KB
• Volume: 34
• Category: Article
• ISSN: 0927-0248
• DOI: 10.1016/0927-0248(94)90042-6

✦ Synopsis

The influences of hydrogen and fluorine ion implantation on polycrystalline silicon (poly-Si) grain boundaries have been investigated. Effective passivation of poly-Si grain boundaries was achieved by hydrogen ion implantation at 300-400°C. From fluorine implantation experiments, we confirmed that fluorine atoms in poly-Si were redistributed with a diffusion tail after annealing at above 600°C. A diffusion tail of fluorine redistribution was not observed in single crystalline silicon. We think that it is possible to passivate poly-Si grain boundaries by controlling the diffusion of fluorine.